How does the "high-NA" EUV differ from ASML's current version of EUV?

The main difference between high-NA extreme ultraviolet, or high-NA EUV lithography, and Asmac's current standard EUV lithography is the use of a larger numerical aperture. high-NA EUV technology utilizes a 0.55 NA lens, which is capable of achieving 8 nm resolution, whereas standard EUV technology uses a 0.33 NA lens. The standard EUV technology uses a 0.33 NA lens. As a result, this new NA technology is able to print smaller feature sizes on wafers, which is critical for chip fabrication technologies at the 2nm and below node.

In addition to the collaboration with Intel, Asmax is working with a wider range of partners in an effort to spread the popularity of high-NA EUV lithography. The New York State government recently announced a $10 billion investment in a new High NA EUV center at the Albany Nanotechnology Complex in partnership with industry players such as IBM and Micron Technology.

In addition, members of the center, including semiconductor equipment giants Tokyo Electron from Japan and Applied Materials, a leader in semiconductor equipment in the U.S., as well as international partners such as Japan's Rapidus Chip Company, will also be able to use the new Asmac EUV lithography machine for research.