Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs
世界领先的温度表现使得低温运行、快速切换的650 V和1200 V SiC MOSFET能够支持多达3倍更强大的人工智能数据中心和更快的充电电动汽车。
Torrance, CA – June 6th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
加州托伦斯—2024年6月6日—Navitas Semiconductor (纳斯达克股票代码:NVTS)是全球领先、唯一的、纯粹的下一代功率半导体公司，成立于2014年，致力于10年以上的功率创新。（纳斯达克：NVTS）是下一代GaNFast氮化镓（GaN）和GeneSiC碳化硅（SiC）电力半导体的行业领先者，宣布了他们的新组合Gen-3 'Fast' (G3F) 650 V和1200 V SiC MOSFET，针对最快的切换速度、最高的效率和增加功率密度的优化，在人工智能数据中心电源、车载充电器（OBCs）、快速道路超级充电器和太阳能/储能系统（ESS）等领域应用。广泛的组合范围涵盖了D2PAK-7到TO-247-4的行业标准封装，为要求严格、高功率、高可靠性的应用而设计。
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
G3F系列针对高速开关性能进行了优化，与CCM TPPFC系统中的竞争者相比，硬开关优点（FOMs）有40%的提高，这将使下一代AI电源供应单元（PSUs）的功率达到10 kW，并使每个机架的功率从30 kW增加到100-120 kW。
The G3F GeneSiC MOSFETs are developed using a proprietary 'trench-assisted planar' technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
G3F GeneSiC MOSFET是使用专有的“沟槽辅助平面”技术开发的，提供比沟槽MOSFET更好的性能，同时提供比竞争对手更优越的健壮性、可制造性和成本效益。G3F MOSFET通过高效率和高速性能实现高效率，在实际运行中比竞争对手能够承受更高的温度。G3F MOSFET模块温度低，可以降低高达25°C的情况，比其他供应商的SiC产品寿命长达3倍。
The 'trench-assisted planar' technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition.
“沟槽辅助平面”技术可以在温度上极低的RDS（ON）在温度上升时增加，从而在完整操作范围内提供最低功率损失，并在实际操作高温时比竞争对手提供高达20%更低的RDS（ON）“G3F为高效、低温运行的SiC性能制定了新的标准，同时具有高功率、高应力系统的高可靠性和健壮性，”SiC技术和操作高级副总裁Sid Sundaresan博士指出，“我们正在推动SiC的界限，切换速度高达600 kHz，开关损耗优于竞争对手40%。”
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
此外，所有GeneSiC MOSFET均具有最高发布的100％测试的雪崩能力，30％更长的短路耐受时间和紧密的阈值电压分布，易于并联，非常适合高功率，快速上市的应用。
Navitas' latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves 'Titanium Plus' efficiency standards, now mandatory in Europe.
Navitas最新的4.5 kW高功率密度AI服务器PSU参考设计采用CRPS185外型尺寸，展示650 V额定值，40 mOhms G3F FET以交错CCM TP PFC拓扑结构实现。与LLC阶段的GaNSafe Power ICs一起，实现138 W / inch3的功率密度和高达97％的峰值效率，轻松达到欧洲的“Titanium Plus”效率标准。
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas' new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
对于EV市场，1,200 V / 34 mOhm（G3F34MT12K）G3F FET使Navitas的新款22 kW，800V双向OBC和3KW DC-DC转换器实现卓越的3.5 kW / L功率密度和95.5％的峰值效率。
"G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems," noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. "We're pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition."
（纳斯达克：NVTS）是唯一一家纯粹的下一代功率半导体公司，为高功率、高应力系统的应用提供卓越的GaN和SiC解决方案。
Parts are available now to qualified customers. Please contact sicsales@navitassemi.com for more information.
零件现在可供合格客户使用。 请联系sicsales@navitassemi.com了解更多信息。
About Navitas
关于Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas was the world's first semiconductor company to be CarbonNeutral-certified.
Navitas Semiconductor (纳斯达克股票代码:NVTS)是全球领先、唯一的、纯粹的下一代功率半导体公司，成立于2014年，致力于10年以上的功率创新。CarbonNeutral认证，企业市场副总裁Stephen Oliver指出10年的功率创新。GaNFast功率IC集成了氮化镓(GaN)功率和驱动、控制、感知和保护，以实现更快的充电、更高的功率密度和更大的能源节省。补充的GeneSiC功率器件是优化的高功率、高电压和高可靠性的碳化硅(SiC)解决方案。重点市场包括电动汽车、太阳能、能源存储、家电/工业、数据中心、移动和消费品。Navitas拥有超过250项已颁发或待批准的专利。Navitas是世界上第一家获得CarbonNeutral认证的半导体公司。补充说明，GaNFast功率IC集成了氮化镓(GaN)功率和驱动、控制、感知和保护，以实现更快的充电、更高的功率密度和更大的能源节省。GeneSiC功率器件是优化的高功率、高电压和高可靠性的碳化硅(SiC)解决方案。重点市场包括电动汽车、太阳能、能源存储、家电/工业、idc概念、移动和消费品。获得碳中和认证.
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Stephen Oliver，企业市场副总裁