Samsung Has Expanded Adoption Of Navitas' GaNFast ICs From The Original Flagship Galaxy S22, S23 And S24 To The Mainstream Galaxy A, And Revolutionary Galaxy Z Fold6 And Galaxy Z Flip6 Smartphones With Enhanced Galaxy AI Features
Samsung Has Expanded Adoption Of Navitas' GaNFast ICs From The Original Flagship Galaxy S22, S23 And S24 To The Mainstream Galaxy A, And Revolutionary Galaxy Z Fold6 And Galaxy Z Flip6 Smartphones With Enhanced Galaxy AI Features
Navitas Semiconductor (NASDAQ:NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced that Samsung had expanded adoption of Navitas' GaNFast ICs from the original flagship Galaxy S22, S23 and S24 to the mainstream Galaxy A, and revolutionary Galaxy Z Fold6 and Galaxy Z Flip6 smartphones with enhanced Galaxy AI features.
半导体领域的行业龙头之一Navitas Semiconductor (纳斯达克股票代码：NVTS)今天宣布，三星将从最初的旗舰产品Galaxy S22、S23和S24扩大采用Navitas的GaNFast IC，到主流Galaxy A，以及具有增强的Galaxy AI功能的革命性Galaxy Z Fold6和Galaxy Z Flip6智能手机。GaNFast氮化镓和GeneSiC碳化硅功率半导体技术让这些三星产品实现更快的充电速度和更长的电池寿命。
GaN runs up to 20x faster than legacy silicon and enables chargers up to 3x more power and 3x faster charging in half size and weight. GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving up to a 50% shrink vs. prior designs.
GaN运行速度比传统硅快20倍，使充电器的尺寸和重量减小了一半，功率提高了3倍，充电速度快了3倍。 GaNFast功率IC可以实现高频率、高效率的功率转换，与之前的设计相比缩小了50％。
The new 25W charger (EP-T2510) features new energy-saving technology to reduce standby losses by 75% to only 5 mW, which aligns with Navitas' environmental advances, where every GaNFast IC saves 4 kg of CO2 vs. legacy silicon chips.
新的25W充电器（EP-T2510）采用新的节能技术，可以将待机损耗降低75％，仅为5 mW，这符合Navitas的环保进步，每个GaNFast IC能够节省4千克二氧化碳，而传统硅芯片无法比拟。
