RTX Has Been Awarded A 3-Year, 2-Phase Contract From DARPA To Develop Foundational Ultra-Wide Bandgap Semiconductors
RTX Has Been Awarded A 3-Year, 2-Phase Contract From DARPA To Develop Foundational Ultra-Wide Bandgap Semiconductors
New class of materials offer improved conductivity and thermal management properties
新型材料类别提供了改进的导电性和热管理性能
ANDOVER, Mass., Oct. 2, 2024 /PRNewswire/ -- Raytheon, an RTX (NYSE:RTX) business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors, or UWBGS, based on diamond and aluminum nitride technology that revolutionize semiconductor electronics with increased power delivery and thermal management in sensors and other electronic applications.
马萨诸塞州安多弗，2024年10月2日 / PRNewswire / - 瑞声公司，一个RTX（纽交所：RTX）业务，已获得从DARPA获得为期三年的两阶段合同，旨在开发基于金刚石和氮化铝技术的基础超宽禁带半导体，或UWBGS，以增加半导体电子设备的功率输出和传感器等其他电子应用的热管理。
During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.
在合同的第一阶段，瑞声高级技术团队将开发金刚石和氮化铝半导体薄膜及其在电子设备上的集成。第二阶段将专注于优化和完善金刚石和氮化铝技术，以将其应用于更大直径的晶片用于传感器应用。
