Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs
全球領先的溫度性能可實現冷卻運行、快速切換 650 V 和 1,200 V 碳化硅 MOSFET，支持高達 3 倍的強大人工智能數據中心和更快的充電電動汽車
Torrance, CA – June 6th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
加利福尼亞州託蘭斯 — 2024 年 6 月 6 日— 納維塔斯半導體 納斯達克股票代碼：NVTS）是下一代GanFast氮化鎵（GaN）和GeneSiC 碳化硅（SiC）功率半導體的行業領導者，宣佈了其新的第三代 “快速”（G3F）650 V和1,200 V SiC MOSFET產品組合，針對AI數據中心電源、車載充電器（OBC）、快速電動汽車路邊超級充電器等應用進行了優化，可實現最快的開關速度、最高的效率和更高的功率密度太陽能/儲能系統 (ESS)。廣泛的產品組合涵蓋從 D2PAK-7 到 TO-247-4 的行業標準封裝，專爲要求苛刻的高功率、高可靠性應用而設計。
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
G3F 系列針對高速開關性能進行了優化，與 CCM TPPFC 系統的競爭對手相比，硬開關優異係數 (FOM) 提高了 40%。這將使下一代人工智能電源單元（PSU）的瓦數增加到10千瓦，並將每個機架的功率從30千瓦增加到100-120千瓦。
The G3F GeneSiC MOSFETs are developed using a proprietary 'trench-assisted planar' technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
G3F GeneSiC MOSFET採用專有的 “溝槽輔助平面” 技術開發。具有優於溝槽的MOSFET性能，同時還提供比競爭對手更高的堅固性、可製造性和成本。G3F MOSFET 具有高效率和高速性能，可實現 最多可降低 25°C 外殼溫度，壽命比其他供應商的碳化硅產品長 3 倍。
The 'trench-assisted planar' technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition.
“溝槽輔助平面” 技術可實現極低的 RDS（開啓） 與溫度相比會升高，這使得整個工作範圍內的功率損耗降至最低，並且功率損耗最多可降低 20%DS（開啓） 與競爭對手相比，在現實生活中在高溫下運行。
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
此外，所有GeneSiC MOSFET都具有迄今爲止最高、經過100％測試的雪崩能力、30％的短路耐受時間以及緊密的閾值電壓分佈，便於並聯，是高功率、快速上市時間的應用的理想之選。
Navitas' latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves 'Titanium Plus' efficiency standards, now mandatory in Europe.
納維塔斯的最新消息 4.5 kW 高功率密度 AI 服務器 PSU CRPS185 外形規格的參考設計展示了用於交錯 CCM TP PFC 拓撲結構的 650 V 額定電壓、40mOhms G3F FET。除了 LLC 階段的 GanSafe Power IC 外，功率密度爲 138 W/inch3 並且實現了97％以上的峯值效率，這輕鬆達到了 “Titanium Plus” 效率標準，該標準現在在歐洲是強制性的。
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas' new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
對於電動汽車市場，1,200 V/34 mOhm (G3F34MT12K) G3F FET 使 Navitas 的新型 22 kW、800V 雙向 OBC 和 3KW DC-DC 轉換器實現 3,5 kW/L 的卓越功率密度和 95.5% 的峯值效率。
"G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems," noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. "We're pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition."
碳化硅技術與運營高級副總裁Sid Sundaresan博士指出：“G3F爲高效、低溫運行的碳化硅性能以及高功率、高應力系統的高可靠性和穩健性設定了新標準。”“我們正在突破碳化硅的界限，開關速度高達600 kHz，硬開關性能值比競爭對手高出40％。”
Parts are available now to qualified customers. Please contact sicsales@navitassemi.com for more information.
現已向符合條件的客戶提供零件。請聯繫 sicsales@navitassemi.com 了解更多信息。
About Navitas
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Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas was the world's first semiconductor company to be CarbonNeutral-certified.
納維塔斯半導體 （納斯達克股票代碼：NVTS）是唯一一家純粹的下一代功率半導體公司，正在慶祝 10 年了 of power innovation 成立於 2014 年 GaNfast 功率 I 將氮化鎵 (GaN) 電源和驅動器與控制、感應和保護相結合，以實現更快的充電、更高的功率密度和更高的能量節約。互補 geneSic 功 設備是經過優化的高功率、高電壓和高可靠性碳化硅 (SiC) 解決方案。重點市場包括電動汽車、太陽能、儲能、家用電器/工業、數據中心、移動設備和消費品。超過250項納維塔斯專利已頒發或正在申請中。Navitas是世界上第一家半導體公司 碳中和認證。
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