Samsung Has Expanded Adoption Of Navitas' GaNFast ICs From The Original Flagship Galaxy S22, S23 And S24 To The Mainstream Galaxy A, And Revolutionary Galaxy Z Fold6 And Galaxy Z Flip6 Smartphones With Enhanced Galaxy AI Features
Samsung Has Expanded Adoption Of Navitas' GaNFast ICs From The Original Flagship Galaxy S22, S23 And S24 To The Mainstream Galaxy A, And Revolutionary Galaxy Z Fold6 And Galaxy Z Flip6 Smartphones With Enhanced Galaxy AI Features
Navitas Semiconductor (NASDAQ:NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced that Samsung had expanded adoption of Navitas' GaNFast ICs from the original flagship Galaxy S22, S23 and S24 to the mainstream Galaxy A, and revolutionary Galaxy Z Fold6 and Galaxy Z Flip6 smartphones with enhanced Galaxy AI features.
半導體領域的行業龍頭之一Navitas Semiconductor (納斯達克股票代碼：NVTS)今天宣佈，三星將從最初的旗艦產品Galaxy S22、S23和S24擴大采用Navitas的GaNFast IC，到主流Galaxy A，以及具有增強的Galaxy AI功能的革命性Galaxy Z Fold6和Galaxy Z Flip6智能手機。GaNFast氮化鎵和GeneSiC碳化硅功率半導體技術讓這些三星產品實現更快的充電速度和更長的電池壽命。
GaN runs up to 20x faster than legacy silicon and enables chargers up to 3x more power and 3x faster charging in half size and weight. GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving up to a 50% shrink vs. prior designs.
GaN運行速度比傳統硅快20倍，使充電器的尺寸和重量減小了一半，功率提高了3倍，充電速度快了3倍。 GaNFast功率IC可以實現高頻率、高效率的功率轉換，與之前的設計相比縮小了50％。
The new 25W charger (EP-T2510) features new energy-saving technology to reduce standby losses by 75% to only 5 mW, which aligns with Navitas' environmental advances, where every GaNFast IC saves 4 kg of CO2 vs. legacy silicon chips.
新的25W充電器（EP-T2510）採用新的節能技術，可以將待機損耗降低75％，僅爲5 mW，這符合Navitas的環保進步，每個GaNFast IC能夠節省4千克二氧化碳，而傳統硅芯片無法比擬。