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東京応化工業:10 nmの限界を突破!線幅7.6 nmの半導体微細加工を可能にする高分子ブロック共重合体の開発に成功

Tokyo Ohka Kogyo: Breaking the 10 nm barrier! Successful development of a high-molecular-weight block copolymer enabling semiconductor fine processing with a linewidth of 7.6 nm.

JPX ·  Aug 22 01:00
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