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Navitas Delivers More Power for AI & EV With Extended GaNSafe Portfolio

Navitas Delivers More Power for AI & EV With Extended GaNSafe Portfolio

Navitas通過擴展的GaNSafe系列爲人工智能和電動車提供更多動力
納微半導體 ·  10/09 00:00

Rugged, cool, extended-power performance with world's most protected GaN power semiconductor in thermally-enhanced TOLT package.

使用世界上最受保護的氮化鎵功率半導體在熱增強TOLt封裝中,具有堅固、酷炫、長續航性能。

Torrance, CA – Oct 9th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package.

加州託蘭斯-2024年10月9日- 納斯達克股票代碼:NVTS的Navitas Semiconductor,作爲唯一的純粹下一代電源半導體公司以及氮化鎵(GaN)功率IC和碳化硅(SiC)技術的行業領導者,宣佈其高功率GaNSafe系列現在可用於TOLt(晶體管外形引線頂部散熱)封裝中。

The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centers, solar/energy storage, and industrial markets. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world's safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.

GaN安全系列專門爲滿足對人工智能數據中心、太陽能/能源存儲和工業市場等高功率應用而設計。Navitas第四代集成了控制、驅動、傳感和關鍵保護功能,實現了前所未有的可靠性和穩健性。GaN安全是世界上最安全的GaN之一,具有短路保護(最大延遲350ns)、所有引腳都具有2kV ESD保護、消除了負門驅動並可編程調整上升斜率控制。所有這些功能都通過4個引腳進行控制,使該封裝能夠像離散的GaN FET一樣對待,無需VCC引腳。

The TOLT packaging enhances thermal dissipation through the top side of the package, allowing heat to be dissipated directly to the heatsink (not through the PCBA). This enables the reduction of operating temperature and increases current capability, resulting in the highest level of system power density, efficiency, and reliability.

TOLt封裝通過封裝頂部增強了熱量散發,使熱量能夠直接散發到散熱器(而非通過PCBA)。這可降低操作溫度並提高電流承載能力,從而實現最高水平的系統功率密度、效率和可靠性。

"With over 200 million units shipped and supplied with a 20-year warranty, Navitas' highly integrated high-power GaNSafe ICs are proven to deliver performance and reliability while simplifying Design-IN for systems up to 22kW," says Charles Bailley, Senior Director of Business Development. "As the most protected, reliable, and safe GaN devices in the industry, GaNSafe took our technology into mainstream applications above 1kW. Now, with the enhanced thermal dissipation of the TOLT package, we are enabling customers to deliver even better performance, efficiency, power density, and reliability in even the most demanding applications."

「Navitas的高度集成、高功率的氮化鎵IC芯片GaNSafe已經發貨超過2億件,並提供20年的保修期。業務發展高級董事查爾斯·貝利表示:GaNSafe已被證明提供性能和可靠性,同時簡化了22kW系統的設計流程。作爲行業內最受保護、可靠和安全的氮化鎵器件,GaNSafe將我們的技術帶入了1kW以上的主流應用領域。現在,藉助TOLt封裝的增強散熱性能,我們使客戶能夠在最苛刻的應用中實現更出色的性能、效率、功率密度和可靠性。」

Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLT packaging is available with a range of RDS(ON)MAX from 25 to 98 mΩ. Integrated features and functions include:

適用於1 kW到22 kW的應用,650V GaNSafe採用TOLt封裝,RDS(ON)MAX範圍爲25至98 mΩ。集成的特性和功能包括:

  • High-speed short-circuit protection, with autonomous 'detect and protect' with ultra-fast 350 ns / 50 ns latency.
  • Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
  • Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
  • 650 V continuous, and 800 V transient voltage capability for extraordinary application conditions.
  • Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)
  • Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.
  • Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional VCC pin
  • Robust, thermally enhanced packaging: ultra-low RQ_JUNC-AMB and board-level thermal cycling (BLTC) Reliability
  • 高速短路保護,具有自主的「檢測和保護」功能,超快的350 ns / 50 ns延遲。
  • 受保護的、調節的、集成的門極驅動控制,具有零門源迴路電感,可靠的高速2 MHz開關能力,以最大化應用功率密度。
  • 與離散氮化鎵晶體管的零相比,具有2 kV的靜電放電(ESD)保護。
  • 650V連續和800V瞬態電壓能力,適應特殊的應用條件。
  • 整合的米勒夾持電路(無負門極偏壓,第三象限效率更高)
  • 可編程的開啓和關閉速度(dV/dt),簡化EMI監管要求。
  • 簡單的4引腳器件,使封裝可以像離散GaN一樣處理,無需額外的VCC引腳
  • 強大,熱性增強的封裝:超低RQ_JUNC-AMb和板級熱循環(BLTC)可靠性

In addition to the new ICs, Navitas will be offering reference design platforms based on GaNSafe TOLT for applications including data center power supplies and EV on-board chargers. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation, and hardware test results.

除了新的IC,Navitas還將提供基於GaNSafe TOLT的參考設計平台,用於數據中心電源和電動車上的充電器等應用。這些系統平台包括完整的設計資料,經過充分測試的硬件,嵌入式軟件,電路圖,物料清單,佈局,仿真以及硬件測試結果。

For more information, please contact info@navitassemi.com.

如需更多信息,請聯繫info@navitassemi.com。

About Navitas

關於Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas offers the industry's first and only 20-year GaNFast warranty and was the world's first semiconductor company to be CarbonNeutral-certified.

Navitas半導體(納斯達克:NVTS)是唯一的純播放、下一代功率半導體公司,成立於2014年,已經有10年的功率創新。GaNFast功率IC集成了氮化鎵(GaN)功率和驅動,具有控制、感知和保護功能,可實現更快的充電、更高的功率密度和更大的節能效果。補充GeneSiC功率器件則是經過優化的高功率、高電壓和高可靠性的碳化硅(SiC)解決方案。重點市場包括電動汽車、太陽能、儲能、家電/工業、數據中心、移動和消費領域。Navitas擁有超過250項專利已發佈或待批准。Navitas提供業內首個和唯一的20年GaNFast保修,並且是世界上第一個獲得碳中和認證的半導體公司。

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Navitas Semiconductor,GaNFast,GaNSense,GeneSiC和Navitas標誌是Navitas Semiconductor Limited及其附屬公司的商標或註冊商標。所有其他品牌、產品名稱和商標或已使用或可能使用以識別其各自所有者的產品或服務。

Contact Information:

聯繫方式:

Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing

Llew Vaughan-Edmunds,產品管理與市場營銷高級總監

info@navitassemi.com

info@navitassemi.com

Stephen Oliver, VP Investor Relations

Stephen Oliver,VP投資者關係

ir@navitassemi.com

ir@navitassemi.com

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