Futong Technology (301607.SZ): Actively conducting application research on third-generation wide bandgap semiconductors such as SiC.

Gelonghui Finance · Oct 23 15:24

Gelonghui October 23rd | Futai Technology (301607.SZ) stated in an investor relations event that silicon carbide material, as a third-generation semiconductor material, has higher pressure resistance, electrical conductivity, lower switch loss, and temperature characteristics compared to traditional silicon materials, making the application of silicon carbide power devices in the automotive power supply field an important trend in the industry. The company follows the trend of industry technological development, attaches great importance to the application research of power semiconductor devices and the optimization development of power electronic topology design, actively conducts research on the application of third-generation wide-bandgap semiconductor devices such as SiC, has already achieved mass production application of SiC semiconductor devices in products, and the application technology is relatively mature.

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富特科技(301607.SZ)：积极开展SiC等第三代宽禁带半导体器件的应用研究

Futong Technology (301607.SZ): Actively conducting application research on third-generation wide bandgap semiconductors such as SiC.

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