Richardson Electronics, Ltd. (NASDAQ:RELL) and Navitas Semiconductor (NASDAQ:NVTS) announced today an expanded distribution partnership for next-gen silicon carbide (SiC) power semiconductors for Europe, the Middle East, and Africa (EMEA).
Navitas is the only pure-play, next-generation power-semiconductor company and industry leader in next-generation GeneSiC silicon carbide (SiC) and GaNFast gallium nitride (GaN) power semiconductors. Enabled by 20 years of SiC innovation leadership, GeneSiC proprietary 'trench-assisted planar' technology provides world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications.
Richardson Electronics, Ltd. will continue to focus on the GeneSiC product line, expanding from North America into EMEA. This includes Navitas' latest family of Gen-3 Fast MOSFETs, delivering a high-speed, cool-running performance that ensures up to 25°C lower case temperatures and up to 3x longer life than alternative SiC products. This enables unprecedented, industry-leading levels of performance, robustness, and quality.
With an entire portfolio from 650V to 6,500V, including bare die for those requiring further flexibility in their engineered solutions, these devices are ideal for higher power applications, including but not limited to, renewable energy and storage, motor drives, induction heating and welding, battery charging, and high voltage DC-DC conversion.
