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Innosilicon (02577.HK) signed a joint development agreement for Gallium Nitride technology with STMicroelectronics.
On April 1, Gelonghui reported that Innosilicon (02577.HK) announced that it has signed a joint development agreement based on Gallium Nitride power technology with STMicroelectronics ("STMicroelectronics") (an independent third party of the company), aiming to jointly promote the application of this technology in Consumer Electronics, Datacenter, Autos, and industrial power systems in the coming years. According to the joint development agreement, Innosilicon can utilize STMicroelectronics' manufacturing capacity outside of China to produce its Gallium Nitride wafers, while STMicroelectronics can also leverage Innosilicon's manufacturing capacity in China to produce its own Gallium Nitride wafers.
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